JPH0322708B2 - - Google Patents

Info

Publication number
JPH0322708B2
JPH0322708B2 JP60216510A JP21651085A JPH0322708B2 JP H0322708 B2 JPH0322708 B2 JP H0322708B2 JP 60216510 A JP60216510 A JP 60216510A JP 21651085 A JP21651085 A JP 21651085A JP H0322708 B2 JPH0322708 B2 JP H0322708B2
Authority
JP
Japan
Prior art keywords
conductivity type
gate electrode
region
type
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60216510A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6276665A (ja
Inventor
Yoshinori Asahi
Tatsuo Noguchi
Yoichi Hiruta
Morya Nakahara
Kenji Maeguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60216510A priority Critical patent/JPS6276665A/ja
Publication of JPS6276665A publication Critical patent/JPS6276665A/ja
Publication of JPH0322708B2 publication Critical patent/JPH0322708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP60216510A 1985-09-30 1985-09-30 相補型半導体装置 Granted JPS6276665A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60216510A JPS6276665A (ja) 1985-09-30 1985-09-30 相補型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60216510A JPS6276665A (ja) 1985-09-30 1985-09-30 相補型半導体装置

Publications (2)

Publication Number Publication Date
JPS6276665A JPS6276665A (ja) 1987-04-08
JPH0322708B2 true JPH0322708B2 (en]) 1991-03-27

Family

ID=16689557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60216510A Granted JPS6276665A (ja) 1985-09-30 1985-09-30 相補型半導体装置

Country Status (1)

Country Link
JP (1) JPS6276665A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5073158B2 (ja) * 2004-09-03 2012-11-14 三星電子株式会社 半導体装置及びその製造方法
JP4996197B2 (ja) * 2006-10-17 2012-08-08 旭化成エレクトロニクス株式会社 半導体装置及びその製造方法
JP5388939B2 (ja) * 2010-04-27 2014-01-15 キヤノン株式会社 固体撮像素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160462A (en) * 1979-05-31 1980-12-13 Fujitsu Ltd Semiconductor device
JPS5736856A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Manufacture of complementary type insulated gate field effect semiconductor device
JPS5887858A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 相補型絶縁ゲ−ト電界効果半導体装置

Also Published As

Publication number Publication date
JPS6276665A (ja) 1987-04-08

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees